目录

软件选用

二极管的制备

仿真代码

结果展示

三级管的制备

仿真代码

结果展示

 CMOS的制备

仿真代码

软件选用

我们选用Silcao仿真软件，此软件不支持Win11系统，请大家谨慎安装，否则会出现蓝屏，甚至会让你电脑重新安装系统。

二极管的制备

仿真代码

go athena

line x loc = 0.00 spac = 0.1
line x loc = 2.0 spac = 0.1
line y loc = 0.0 spac = 0.005
line y loc = 0.50 spac = 0.0125
line y loc = 2.0 spac = 0.1

#衬底定义
init silicon c.phosphorus=1.0e14 orientation =100 two.d

#淀积氧化层
deposit oxide thick  =0.2 divisions = 2

#刻蚀氧化层
etch oxide start x=0.5 y=-0.2
etch continue x=0.5 y=0
etch continue x=1.5 y=0
etch done x=1.5 y=0.0

etch silicon left pl.x=0.5
etch silicon right pl.x=1.5

#扩散
diffuse time  = 60 temp = 1100 c.boron = 1.0e15 press = 1.0

#淀积金属
etch oxide all
deposit alum thickness = 0.2 div =3

#刻蚀金属
etch alum left pl.x=0.5
etch alum right pl.x=1.5

#二极管电极的定义
electrode name = anode x = 1.0
electorde name = cathode backside

#器件结构的保存
structure outf=diode_pro.str

#器件结构的输出
tonyplot diode_pro.str

tonyplot
quit

结果展示

三级管的制备

仿真代码

go athena

#x方向网格设置
line x loc=0 spac=0.1
line x loc=4 spac=0.1
#y方向网格设置
line y loc=0.0 spac=0.005
line y loc=0.5 spac=0.0125
line y loc=2 spac=0.1

#沉底定义
init silicon c.phos=1.0e14 orientation=100 two.d

#淀积氧化层
deposit oxide thick=0.20 division=2

#刻蚀氧化层
etch oxide start x=1.5 y=-0.2
etch continue x=1.5 y=0
etch continue x=3.5 y=0
etch done x=3.5 y=-0.2

#扩散
diffuse time=60 temp=1100 c.boron=1.0e15 press=1.5
etch oxide all

#淀积氧化层
deposit oxide thick=0.5 division=2

#刻蚀氧化层
etch oxide start x=2.5 y=-0.2
etch continue x=2.5 y=0
etch continue x=3.5 y=0
etch done x=3.5 y=-0.2

#刻蚀金属形成射极
etch alum start x=3 y=-0.2
etch continue x=3 y=0
etch continue x=4 y=0
etch done x=4 y=-0.2

#刻蚀金属形成基极
etch alum start x=2 y=-0.2
etch continue x=2 y=0
etch continue x=2.5 y=0
etch done x=2.5 y=-0.2

#刻蚀金属形成集电极
etch alum start x=0.8 y=-0.2
etch continue x=0.8 y=0
etch continue x=1.5 y=0
etch done x=1.5 y=-0.2
etch alum left pl.x=0.2

#二极管淀积的定义
electrode name=e x=2.8
electrode name=b x=1.8
electrode name=c x=0.6

#器件结构的保存
#structure outf=diode_pro.str

#器件结构的输出
#tonyplot    diode_pro.str

#结束
tonyplot

结果展示

 CMOS的制备

仿真代码

go athena
line x loc=-7 spac=0.05
line x loc=0 spac=0.05
line x loc=7 spac=0.05
line y loc=0.0 spac=0.05
line y loc=1.5 spac=0.08
line y loc=2.5 spac=0.25
line y loc=4.0 spac=0.5
init silicon orientation=100 c.boron=1e14 space.mul=2 two.d
#N阱生成
deposit oxide thickness=0.8
#光刻
etch oxide start x=-6.5 y=0
etch continue x=-6.5 y=-0.8
etch continue x=0 y=-0.8
etch done x=0 y=0
#磷注入、退火
implant phosphor dose=5e12 energy=80 pears
diffus time=30 temp=1000 nitrogen press=1.00
etch oxide
#场氧区形成
deposit oxide thickness=0.1
deposit nitride thickness=0.13 div=2

etch nitride left x=-5
etch oxide left x=-5
etch nitride start x=-1 y=-0.1
etch continue x=-1 y=-0.23
etch continue x=1 y=-0.23
etch done x=1 y=-0.1

etch oxide start x=-1 y=0
etch continue x=-1 y=-0.1
etch continue x=1 y=-0.1
etch done x=1 y=0

etch nitride right x=5
etch oxide right x=5

diffus time=30 temp=1000 dryo2 press=1.00 hcl=3
diffus time=35 temp=1100 weto2 press=1.00 hcl=3
diffus time=30 temp=1000 dry02 press=1.00 hcl=3

etch nitride
etchoxide thickness=0.2
rate.polish oxide machine=cmp u.s max.hard=0.02 min.hard=0.01 isotropic=0.001
polish machine=cmp time=0.05 min
#柵氧化层形成
diffus time=10 temp=700 dryo2 press=1.00 hcl=3
diffus time=5 temp=950 weto2 press=1.00 hcl=3
diffus time=10 temp=700 dry02 press=1.00 hcl=3
#多晶硅形成
deposit poly thick=0.05 div=6
#刻蚀
etch poly left x=-3.5
etch poly right x=3.5

etch poly start x=-2.5 y=-0.1
etch continue x=-2.5 y=-0.3
etch continue x=2.5 y=-0.3
etch done x=2.5 y=-0.1

structure outfile=cmos_pro10.str
tonyplot cmos_pro10.str
deposit name.resist=AZ1350J thick=0.5 div=10

etch name.resist=AZ1350J x=3.5 right
etch name.resist=AZ1350J start x=1.5 y=0
etch continue x=1.5 y=0
etch continue x=1.5 y=-0.8
etch continue x=2.5 y=-0.8
etch done x=2.5 y=0

tonyplot
quit

最后图像可以根据任务要求在tonyplot中进行对应的调节